{"doi":"10.7567/1347-4065/ab5697","title":"Instant Cu-to-Cu direct bonding enabled by 〈111〉-oriented nanotwinned Cu bumps","abstract":"<jats:title>Abstract</jats:title>\n                  <jats:p>\n                    Cu-to-Cu direct bonding was successfully achieved in 10 s with 〈111〉-oriented nanotwinned Cu (nt-Cu) bumps in ambient N\n                    <jats:sub>2</jats:sub>\n                    . The bonding temperature and pressure were 300 °C and 90 MPa, respectively. A nearly void-free interface and a low bump resistance of 4.9 mΩ can be observed after a short-time bonding process. Besides, longer bonding times of 60 s and 30 s were employed, but the resistances of the Cu joints did not decrease significantly when the bonding time increased to 60 s. However, the nt-Cu columnar grains started to recrystallize during the 60 s bonding and started detwinning in 10 s bonding. Yet, the bonding interface remained under such a short bonding time.\n                  </jats:p>","journal":"Japanese Journal of Applied Physics","year":2020,"id":651919,"datarank":0.5570358100056463,"base_score":3.713572066704308,"endowment":3.713572066704308,"self_citation_contribution":0.5570358100056463,"citation_network_contribution":0.0,"self_endowment_contribution":0.5570358100056463,"citer_contribution":0.0,"corpus_percentile":null,"corpus_rank":null,"citation_count":40,"citer_count":0,"citers_with_citation_signal":0,"citers_with_endowment":0,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":1700415,"name":"Jing-Ye Juang","orcid":null,"position":1,"is_corresponding":false},{"id":142007,"name":"Chih Chen","orcid":null,"position":2,"is_corresponding":false},{"id":1700413,"name":"Kai Cheng Shie","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"resolved":true,"title":"Instant Cu-to-Cu direct bonding enabled by 〈111〉-oriented nanotwinned Cu bumps","abstract":"<jats:title>Abstract</jats:title>\n                  <jats:p>\n                    Cu-to-Cu direct bonding was successfully achieved in 10 s with 〈111〉-oriented nanotwinned Cu (nt-Cu) bumps in ambient N\n                    <jats:sub>2</jats:sub>\n                    . The bonding temperature and pressure were 300 °C and 90 MPa, respectively. A nearly void-free interface and a low bump resistance of 4.9 mΩ can be observed after a short-time bonding process. Besides, longer bonding times of 60 s and 30 s were employed, but the resistances of the Cu joints did not decrease significantly when the bonding time increased to 60 s. However, the nt-Cu columnar grains started to recrystallize during the 60 s bonding and started detwinning in 10 s bonding. Yet, the bonding interface remained under such a short bonding time.\n                  </jats:p>","is_dataset_classified":null,"base_score":3.713572066704308,"endowment":3.713572066704308,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"19162232","pmcid":null,"openalex_id":"https://openalex.org/W2982809341","authors":[],"funders":[],"total_grants":0,"fwci":1.8295,"citation_percentile":0.85382265,"influential_citations":0,"citation_trend":[{"year":2020,"count":4},{"year":2021,"count":12},{"year":2022,"count":4},{"year":2023,"count":4},{"year":2024,"count":5},{"year":2025,"count":8},{"year":2026,"count":3}],"oa_status":"bronze","license":"https://iopscience.iop.org/info/page/text-and-data-mining","oa_locations":[{"url":"https://iopscience.iop.org/article/10.7567/1347-4065/ab5697/pdf","host_type":"journal"},{"url":"https://iopscience.iop.org/article/10.7567/1347-4065/ab5697/pdf","host_type":"publisher"},{"url":"http://iopscience.iop.org/article/10.7567/1347-4065/ab5697","host_type":"publisher"},{"url":"http://iopscience.iop.org/article/10.7567/1347-4065/ab5697/pdf","host_type":"publisher"},{"url":"https://iopscience.iop.org/article/10.7567/1347-4065/ab5697","host_type":"publisher"},{"url":"https://doi.org/10.7567/1347-4065/ab5697","host_type":"journal"}],"fields_of_study":["3D IC and TSV technologies","Electronic Packaging and Soldering Technologies","Copper Interconnects and Reliability"],"mesh_terms":[],"keywords":["Direct bonding","Anodic bonding","Materials science","Bonding strength","Thermocompression bonding","Composite material","Void (composites)","Metallurgy","Crystallography","Chemistry","Layer (electronics)","Silicon"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-08-10T11:14:30.779119Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}