{"doi":"10.7498/aps.56.2895","title":"Study of high breakdown-voltage AlGaN/GaN FP-HEMT","abstract":"<jats:p xml:lang=\"en\">Fabrication and the characteristics at room temperature of FP-HEMT are reported, followed by a comparison of the actual characteristics with the conventional HEMT. With the incorporation of  field plate, the breakdown voltage was enhanced from 52 to 142V.Comparison between AlGaN/GaN FP-HEMT and the conventional HEMT are also made, using Silvaco, as the  simulation tool. The effect of enhancing the breakdown voltage is also investigated.</jats:p>","journal":"Acta Physica Sinica","year":2007,"id":630548,"datarank":0.32958368660043297,"base_score":2.1972245773362196,"endowment":2.1972245773362196,"self_citation_contribution":0.32958368660043297,"citation_network_contribution":0.0,"self_endowment_contribution":0.32958368660043297,"citer_contribution":0.0,"corpus_percentile":null,"corpus_rank":null,"citation_count":8,"citer_count":0,"citers_with_citation_signal":0,"citers_with_endowment":0,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":640844,"name":"Feng Qian","orcid":"0000-0002-2312-5936","position":1,"is_corresponding":false},{"id":77436,"name":"Hao Yue","orcid":"0000-0002-8815-7365","position":2,"is_corresponding":false},{"id":836019,"name":"Yang Yan","orcid":"0000-0002-1743-0184","position":3,"is_corresponding":false},{"id":1633574,"name":"Guo Liang-Liang","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"resolved":true,"title":"Study of high breakdown-voltage AlGaN/GaN FP-HEMT","abstract":"<jats:p xml:lang=\"en\">Fabrication and the characteristics at room temperature of FP-HEMT are reported, followed by a comparison of the actual characteristics with the conventional HEMT. With the incorporation of  field plate, the breakdown voltage was enhanced from 52 to 142V.Comparison between AlGaN/GaN FP-HEMT and the conventional HEMT are also made, using Silvaco, as the  simulation tool. The effect of enhancing the breakdown voltage is also investigated.</jats:p>","is_dataset_classified":null,"base_score":2.1972245773362196,"endowment":2.1972245773362196,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"19910364","pmcid":null,"openalex_id":"https://openalex.org/W1905863001","authors":[],"funders":[],"total_grants":0,"fwci":0.3003,"citation_percentile":0.54962211,"influential_citations":0,"citation_trend":[{"year":2013,"count":2},{"year":2014,"count":1},{"year":2015,"count":2}],"oa_status":"hybrid","license":"cc-by","oa_locations":[{"url":"https://doi.org/10.7498/aps.56.2895","host_type":"journal"},{"url":"https://doi.org/10.7498/aps.56.2895","host_type":"publisher"}],"fields_of_study":["GaN-based semiconductor devices and materials","Plasma Diagnostics and Applications","Silicon Carbide Semiconductor Technologies"],"mesh_terms":[],"keywords":["High-electron-mobility transistor","Breakdown voltage","Materials science","Optoelectronics","Fabrication","Voltage","Electrical engineering","Transistor","Medicine"],"sdg_mappings":[{"sdg_number":0,"sdg_label":"Affordable and clean energy"}],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-08-05T21:37:54.365860Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}