{"doi":"10.3390/proceedings1040309","title":"Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography","abstract":null,"journal":"Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017","year":2017,"id":589481,"datarank":0.45024813389571783,"base_score":1.9459101490553132,"endowment":1.9459101490553132,"self_citation_contribution":0.29188652235829704,"citation_network_contribution":0.15836161153742076,"self_endowment_contribution":0.29188652235829704,"citer_contribution":0.15836161153742076,"corpus_percentile":null,"corpus_rank":null,"citation_count":6,"citer_count":4,"citers_with_citation_signal":3,"citers_with_endowment":3,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":1508204,"name":"Shinta Mariana","orcid":null,"position":1,"is_corresponding":false},{"id":1508205,"name":"Gerry Hamdana","orcid":null,"position":2,"is_corresponding":false},{"id":160133,"name":"Feng Yu","orcid":null,"position":3,"is_corresponding":false},{"id":1508206,"name":"Muhammad Fahlesa Fatahilah","orcid":null,"position":4,"is_corresponding":false},{"id":1508207,"name":"Irene Manglano Clavero","orcid":null,"position":5,"is_corresponding":false},{"id":1508208,"name":"Prabowo Puranto","orcid":null,"position":6,"is_corresponding":false},{"id":1373478,"name":"Zhi Li","orcid":"0000-0002-1699-9918","position":7,"is_corresponding":false},{"id":1508209,"name":"Uwe Brand","orcid":null,"position":8,"is_corresponding":false},{"id":1508210,"name":"Joan Daniel Prades","orcid":"0000-0001-7055-5499","position":9,"is_corresponding":false},{"id":1508211,"name":"Erwin Peiner","orcid":null,"position":10,"is_corresponding":false},{"id":1508212,"name":"Andreas Waag","orcid":null,"position":11,"is_corresponding":false},{"id":1508213,"name":"Hutomo Suryo Wasisto","orcid":"0000-0002-4522-3625","position":12,"is_corresponding":false},{"id":1508203,"name":"Tony Granz","orcid":"0000-0002-0540-9505","position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"resolved":true,"title":"Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography","abstract":"Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the well-controlled chemical surface treatment prior to the nanobead deposition and etching process, vertical GaN nanowire arrays with diameter of ~35 nm, pitch of ~350 nm, and aspect ratio of >10 could be realized using 500 nm polystyrene nanobead (PN) masks. This work has demonstrated a feasibility of using NSLL as an alternative for other sophisticated but expensive nanolithography methods to manufacture low-cost but highly ordered 3D GaN nanostructures.","is_dataset_classified":null,"base_score":1.9459101490553132,"endowment":1.9459101490553132,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"26657633","pmcid":null,"openalex_id":"https://openalex.org/W2743912994","authors":[],"funders":[],"total_grants":0,"fwci":null,"citation_percentile":null,"influential_citations":0,"citation_trend":[{"year":2018,"count":1},{"year":2019,"count":3},{"year":2023,"count":1},{"year":2024,"count":1}],"oa_status":"gold","license":"cc-by","oa_locations":[{"url":"https://www.mdpi.com/2504-3900/1/4/309/pdf?version=1503800506","host_type":""},{"url":"https://www.mdpi.com/2504-3900/1/4/309/pdf?version=1503800506","host_type":""},{"url":"https://www.mdpi.com/2504-3900/1/4/309/pdf","host_type":"publisher"},{"url":"https://doi.org/10.3390/proceedings1040309","host_type":""},{"url":"https://doaj.org/article/dd6d86435cf247fe99e2a907ad4b86bc","host_type":"repository"}],"fields_of_study":["GaN-based semiconductor devices and materials","Metal and Thin Film Mechanics","Nanowire Synthesis and Applications"],"mesh_terms":[],"keywords":["Nanolithography","Nanosphere lithography","Materials science","Nanowire","Gallium nitride","Etching (microfabrication)","Lithography","Nanotechnology","Optoelectronics","Dry etching","Plasma etching","Photolithography","Reactive-ion etching","Fabrication","Layer (electronics)"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-07-23T19:19:26.801879Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}