{"doi":"10.1116/1.583088","title":"Pattern width of negative resists in x-ray lithography","abstract":"<jats:p>In x-ray lithography with divergent x rays, the relationships between the fine line pattern widths of negative resists and exposure parameters were investigated in order to quantitatively analyze the factors to cause the deviations of pattern widths. It was demonstrated that the resist pattern width can be determined by an equation consisting of five variables; that is, pattern width of fine line on mask, size of effective penumbral shadow, mask contrast, resist contrast, and normalized resist thickness. It was confirmed that the theoretical resist pattern widths calculated with the equation agree well with the experimental results. The simulation method developed in this work could be effectively used to determine the exposure parameters in high resolution lithography with divergent x rays.</jats:p>","journal":"Journal of Vacuum Science &amp; Technology B: Microelectronics Processing and Phenomena","year":1985,"id":30499,"datarank":0.16479184330021646,"base_score":1.0986122886681096,"endowment":1.0986122886681096,"self_citation_contribution":0.16479184330021646,"citation_network_contribution":0.0,"self_endowment_contribution":0.16479184330021646,"citer_contribution":0.0,"corpus_percentile":null,"corpus_rank":null,"citation_count":2,"citer_count":2,"citers_with_citation_signal":0,"citers_with_endowment":0,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":165557,"name":"Yoshiki Suzuki","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"base_score":1.0986122886681096,"endowment":1.0986122886681096,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"18998881","pmcid":null,"openalex_id":"https://openalex.org/W2012992550","authors":[],"funders":[],"total_grants":0,"fwci":1.099,"citation_percentile":0.76029261,"influential_citations":0,"citation_trend":[],"oa_status":"closed","license":null,"oa_locations":[{"url":"https://pubs.aip.org/avs/jvb/article-pdf/3/4/1009/12087690/1009_1_online.pdf","host_type":"publisher"},{"url":"https://doi.org/10.1116/1.583088","host_type":"journal"}],"fields_of_study":["Advancements in Photolithography Techniques","Electron and X-Ray Spectroscopy Techniques","Welding Techniques and Residual Stresses","Chemistry","Physics","Engineering","Materials Science"],"mesh_terms":[],"keywords":["Resist","Lithography","X-ray lithography","Line width","Optics","Electron-beam lithography","Materials science","Line (geometry)","Physics","Nanotechnology","Geometry","Mathematics"],"sdg_mappings":[{"sdg_number":0,"sdg_label":"Sustainable cities and communities"}],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-06-09T02:57:11.507594Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}