{"doi":"10.1109/imoc.1999.866251","title":"A novel low-frequency PIN diode","abstract":null,"journal":"1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","year":null,"id":686112,"datarank":0.20794415416798362,"base_score":1.3862943611198906,"endowment":1.3862943611198906,"self_citation_contribution":0.20794415416798362,"citation_network_contribution":0.0,"self_endowment_contribution":0.20794415416798362,"citer_contribution":0.0,"corpus_percentile":null,"corpus_rank":null,"citation_count":3,"citer_count":0,"citers_with_citation_signal":0,"citers_with_endowment":0,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":1792538,"name":"L. Drozdovskaia","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"resolved":true,"title":"A novel low-frequency PIN diode","abstract":"This paper describes computer simulation results of a novel multilayer PIN diode suitable for the high-power low-frequency application. On the other hand the use of this diode in the microwave region allows one to decrease the DC reverse bias voltage. The novel diode is composed of p/sup +/ and n/sup +/ semiconductor layers separated by composite intrinsic region n-n/sup -/, forming a p/sup +/-n-n/sup -/-n/sup +/ structure. It may be considered as a PIN diode.","is_dataset_classified":null,"base_score":1.3862943611198906,"endowment":1.3862943611198906,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"26207759","pmcid":null,"openalex_id":"https://openalex.org/W1810291627","authors":[],"funders":[],"total_grants":0,"fwci":0.0,"citation_percentile":0.10191021,"influential_citations":0,"citation_trend":[{"year":2023,"count":1}],"oa_status":"closed","license":null,"oa_locations":[{"url":"https://doi.org/10.1109/imoc.1999.866251","host_type":""}],"fields_of_study":["Microwave Engineering and Waveguides","Semiconductor Lasers and Optical Devices","GaN-based semiconductor devices and materials"],"mesh_terms":[],"keywords":["PIN diode","Diode","Step recovery diode","Optoelectronics","Microwave","Materials science","Backward diode","Power (physics)","Voltage","Semiconductor device","Physics","Electrical engineering","Schottky diode","Engineering","Nanotechnology"],"sdg_mappings":[{"sdg_number":0,"sdg_label":"Affordable and clean energy"}],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-08-18T18:34:31.960777Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}