{"doi":"10.1109/i2itcon65200.2025.11210649","title":"Optimization in Conventional Composite Recessed Structured HEMT","abstract":null,"journal":"2025 International Conference on Information, Implementation, and Innovation in Technology (I2ITCON)","year":2025,"id":617772,"datarank":0.0,"base_score":0.0,"endowment":0.0,"self_citation_contribution":0.0,"citation_network_contribution":0.0,"self_endowment_contribution":0.0,"citer_contribution":0.0,"corpus_percentile":null,"corpus_rank":null,"citation_count":0,"citer_count":0,"citers_with_citation_signal":0,"citers_with_endowment":0,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":1593316,"name":"Sachin Dhariwal","orcid":null,"position":1,"is_corresponding":false},{"id":1069663,"name":"Aastha Singh","orcid":"0000-0002-7792-8275","position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"resolved":true,"title":"Optimization in Conventional Composite Recessed Structured HEMT","abstract":"The development of enhancement-mode GaN-based HEMTs with elevated turn-on voltage is crucial for reliable and safe power electronic systems. In this work, a novel composite recessed-gate HEMT with an integrated stepped channel structure is proposed, combining the advantages of both recessed gate engineering and channel modulation. The integration of Al 2 O 3 on the recessed p-GaN region boosts Vth, but typically at the cost of reduced saturation current Isat and transconductance gm. By embedding a stepped channel within the composite recessed gate, the proposed device achieves a superior balance of high Vth. Simulation results demonstrate that the optimized structure achieves a Vth of 5.7 V, over conventional recessed p-GaN HEMTs with Al2O3 and the device achieves a breakdown voltage of 1250 V. The electric field distribution is significantly improved, and leakage current is suppressed. These results indicate that the composite recessed-gate HEMT with a stepped channel and field modulation offers a promising solution for next-generation highpower and RF GaN device applications.","is_dataset_classified":null,"base_score":0.0,"endowment":0.0,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"19767382","pmcid":null,"openalex_id":"https://openalex.org/W4415883435","authors":[],"funders":[],"total_grants":0,"fwci":0.0,"citation_percentile":0.33202247,"influential_citations":0,"citation_trend":[],"oa_status":"closed","license":"https://doi.org/10.15223/policy-029","oa_locations":[{"url":"http://xplorestaging.ieee.org/ielx8/11210439/11208853/11210649.pdf?arnumber=11210649","host_type":"publisher"},{"url":"https://doi.org/10.1109/i2itcon65200.2025.11210649","host_type":""}],"fields_of_study":["GaN-based semiconductor devices and materials","Silicon Carbide Semiconductor Technologies","Advanced Power Amplifier Design","Engineering","Physics","Materials Science"],"mesh_terms":[],"keywords":["Transconductance","High-electron-mobility transistor","Composite number","Voltage","Saturation current","Threshold voltage","Leakage (economics)","Channel (broadcasting)"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-08-03T02:36:22.264807Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}