{"doi":"10.1109/edssc.2011.6117728","title":"Analysis and simulation of inverter employing SiC Schottky diode","abstract":null,"journal":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","year":2011,"id":676468,"datarank":0.10397207708399181,"base_score":0.6931471805599453,"endowment":0.6931471805599453,"self_citation_contribution":0.10397207708399181,"citation_network_contribution":0.0,"self_endowment_contribution":0.10397207708399181,"citer_contribution":0.0,"corpus_percentile":null,"corpus_rank":null,"citation_count":1,"citer_count":1,"citers_with_citation_signal":0,"citers_with_endowment":0,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":965995,"name":"Yuming Zhang","orcid":"0009-0007-9710-7726","position":1,"is_corresponding":false},{"id":1767486,"name":"Yimen Zhang","orcid":null,"position":2,"is_corresponding":false},{"id":1767490,"name":"Hongliang Lu","orcid":null,"position":3,"is_corresponding":false},{"id":1767493,"name":"Renxu Jia","orcid":null,"position":4,"is_corresponding":false},{"id":646573,"name":"Yang Gu","orcid":"0000-0001-8572-2907","position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"resolved":true,"title":"Analysis and simulation of inverter employing SiC Schottky diode","abstract":"The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.","is_dataset_classified":null,"base_score":0.6931471805599453,"endowment":0.6931471805599453,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"26207759","pmcid":null,"openalex_id":"https://openalex.org/W2031301606","authors":[],"funders":[],"total_grants":0,"fwci":0.0,"citation_percentile":0.11286322,"influential_citations":0,"citation_trend":[{"year":2020,"count":1}],"oa_status":"closed","license":null,"oa_locations":[{"url":"http://xplorestaging.ieee.org/ielx5/6108454/6117556/06117728.pdf?arnumber=6117728","host_type":"publisher"},{"url":"https://doi.org/10.1109/edssc.2011.6117728","host_type":""}],"fields_of_study":["Silicon Carbide Semiconductor Technologies","Advanced DC-DC Converters","Induction Heating and Inverter Technology"],"mesh_terms":[],"keywords":["Schottky diode","Inverter","Materials science","Diode","Step recovery diode","Optoelectronics","Flyback diode","Power (physics)","Silicon carbide","Backward diode","PIN diode","Electronic engineering","Electrical engineering","Engineering","Voltage","Physics"],"sdg_mappings":[{"sdg_number":0,"sdg_label":"Affordable and clean energy"}],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-08-17T02:38:34.406930Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}