{"doi":"10.1103/physrevlett.45.494","title":"New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance","abstract":"Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.","journal":"Physical Review Letters","year":1980,"id":10723,"datarank":32.00749200157202,"base_score":8.848078421168667,"endowment":8.848078421168667,"self_citation_contribution":1.3272117631753002,"citation_network_contribution":30.680280238396715,"self_endowment_contribution":1.3272117631753002,"citer_contribution":30.680280238396715,"corpus_percentile":98.8,"corpus_rank":1728,"citation_count":6960,"citer_count":199,"citers_with_citation_signal":199,"citers_with_endowment":199,"datacite_reuse_total":0,"is_dataset":false,"is_oa":true,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":"1980-08-11","authors":[{"id":88151,"name":"G. Dorda","orcid":null,"position":1,"is_corresponding":false},{"id":88152,"name":"M. Pepper","orcid":null,"position":2,"is_corresponding":false},{"id":88153,"name":"K. von Klitzing","orcid":"0000-0002-1720-7396","position":3,"is_corresponding":false},{"id":88150,"name":"K. v. Klitzing","orcid":null,"position":0,"is_corresponding":true}],"reference_count":14,"raw_metadata":{"citation_network_status":"fetched"},"created_at":"2026-03-01T18:20:47.508186Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}