{"doi":"10.1063/1.93986","title":"Auger recombination in InGaAsP","abstract":"<jats:p>Auger recombination in InGaAsP is calculated taking into account a realistic band structure instead of the usual parabolic approximation. It follows that the direct conduction-band process is negligible (at T=300 K), contrary to the parabolic approximation. Actually the valence-band process prevails by far as long as only direct Auger processes are considered. However, if phonon-assisted Auger recombination is included the phonon-assisted conduction-band process dominates. Altogether, a decrease of Auger recombination results, which is in agreement with experiments.</jats:p>","journal":"Applied Physics Letters","year":1983,"id":27607,"datarank":5.683217945522796,"base_score":4.060443010546419,"endowment":4.060443010546419,"self_citation_contribution":0.6090664515819629,"citation_network_contribution":5.074151493940833,"self_endowment_contribution":0.6090664515819629,"citer_contribution":5.074151493940833,"corpus_percentile":null,"corpus_rank":null,"citation_count":57,"citer_count":52,"citers_with_citation_signal":46,"citers_with_endowment":46,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":156854,"name":"A. Haug","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"base_score":4.060443010546419,"endowment":4.060443010546419,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"18998881","pmcid":null,"openalex_id":"https://openalex.org/W2057193912","authors":[],"funders":[],"total_grants":0,"fwci":7.0612,"citation_percentile":0.98234712,"influential_citations":0,"citation_trend":[{"year":2019,"count":2}],"oa_status":"closed","license":null,"oa_locations":[{"url":"https://pubs.aip.org/aip/apl/article-pdf/42/6/512/18448249/512_1_online.pdf","host_type":"publisher"},{"url":"https://doi.org/10.1063/1.93986","host_type":"journal"}],"fields_of_study":["Semiconductor Quantum Structures and Devices","Semiconductor materials and interfaces","Surface and Thin Film Phenomena","Physics","Engineering"],"mesh_terms":[],"keywords":["Auger","Auger effect","Conduction band","Phonon","Recombination","Atomic physics","Valence band","Thermal conduction","Condensed matter physics","Quasi Fermi level","Valence (chemistry)","Chemistry","Materials science","Band gap","Physics","Electron","Thermodynamics","Nuclear physics"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-06-08T18:41:11.985770Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}