{"doi":"10.1063/1.1897074","title":"Electronic structures of wide-band-gap (SiC)1−x(AlN)x quaternary semiconductors","abstract":"<jats:p>Due to small lattice mismatch and large-band-gap difference between SiC and AlN, the light-emitting devices fabricated from (SiC)1−x(AlN)x quaternary semiconductors may be tuned over a wide wavelength range. To understand the feasibility of this application, first-principles calculations have been done to study their electronic structures. It is found that there is a transition of the band gap from indirect to direct when x is greater than about 0.20. The band gap is also found to bow down as a function of x. The calculated results suggest that the direct band gap of (SiC)1−x(AlN)x can be tuned over a wide range from 2.97to6.28eV. Thus, (SiC)1−x(AlN)x is potentially useful for optoelectronic applications.</jats:p>","journal":"Journal of Applied Physics","year":2005,"id":38312,"datarank":0.5629343644327787,"base_score":1.9459101490553132,"endowment":1.9459101490553132,"self_citation_contribution":0.29188652235829704,"citation_network_contribution":0.2710478420744817,"self_endowment_contribution":0.29188652235829704,"citer_contribution":0.2710478420744817,"corpus_percentile":null,"corpus_rank":null,"citation_count":6,"citer_count":6,"citers_with_citation_signal":4,"citers_with_endowment":4,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":190230,"name":"M.-H. Tsai","orcid":null,"position":1,"is_corresponding":false},{"id":190229,"name":"Y.-H. Tang","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"base_score":1.9459101490553132,"endowment":1.9459101490553132,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"18998881","pmcid":null,"openalex_id":"https://openalex.org/W1979152273","authors":[],"funders":[],"total_grants":0,"fwci":0.8274,"citation_percentile":0.69543088,"influential_citations":0,"citation_trend":[{"year":2023,"count":1}],"oa_status":"closed","license":null,"oa_locations":[{"url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.1897074/14847910/103702_1_online.pdf","host_type":"publisher"},{"url":"https://doi.org/10.1063/1.1897074","host_type":"journal"}],"fields_of_study":["GaN-based semiconductor devices and materials","Semiconductor materials and devices","Silicon Carbide Semiconductor Technologies","Materials Science","Physics","Engineering"],"mesh_terms":[],"keywords":["Band gap","Materials science","Wide-bandgap semiconductor","Semiconductor","Direct and indirect band gaps","Optoelectronics","Electronic band structure","Lattice constant","Electronic structure","Condensed matter physics","Semimetal","Optics","Diffraction","Physics"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-06-11T02:25:20.275852Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}