{"doi":"10.1063/1.1144345","title":"A selective polishing approach for the fabrication of bonded-wafer silicon-on-insulator","abstract":"<jats:p>A new polishing machine has been constructed for the fabrication of bonded-wafer silicon-on-insulator (bonded-wafer SOI) through a numerically controlled polishing technique. The polishing machine is equipped with 32 small-area tools which produce the variation of polishing pressure over a wafer surface. The tools do not rotate. Instead, the wafers being polished perform an oscillatory motion. A tool removal profile which was adequate for selectively polishing one place on a wafer without affecting its neighboring areas was obtained. As a result of its test operation, the initial thickness deviation of σ=380 nm of the top Si layer of a bonded-wafer SOI sample has been improved to σ=48 nm.</jats:p>","journal":"Review of Scientific Instruments","year":1993,"id":43676,"datarank":0.15836477525698633,"base_score":0.6931471805599453,"endowment":0.6931471805599453,"self_citation_contribution":0.10397207708399181,"citation_network_contribution":0.054392698172994525,"self_endowment_contribution":0.10397207708399181,"citer_contribution":0.054392698172994525,"corpus_percentile":null,"corpus_rank":null,"citation_count":1,"citer_count":1,"citers_with_citation_signal":1,"citers_with_endowment":1,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":168538,"name":"A. Yamada","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"base_score":0.6931471805599453,"endowment":0.6931471805599453,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"20810602","pmcid":null,"openalex_id":"https://openalex.org/W1985417357","authors":[],"funders":[],"total_grants":0,"fwci":0.0,"citation_percentile":0.09687959,"influential_citations":0,"citation_trend":[{"year":2022,"count":1}],"oa_status":"closed","license":null,"oa_locations":[{"url":"https://pubs.aip.org/aip/rsi/article-pdf/64/10/2993/19247982/2993_1_online.pdf","host_type":"publisher"},{"url":"https://doi.org/10.1063/1.1144345","host_type":"journal"}],"fields_of_study":["Advanced Surface Polishing Techniques","3D IC and TSV technologies","Advanced MEMS and NEMS Technologies","Physics","Engineering","Materials Science"],"mesh_terms":[],"keywords":["Polishing","Wafer","Materials science","Silicon on insulator","Fabrication","Chemical-mechanical planarization","Wafer backgrinding","Insulator (electricity)","Optoelectronics","Silicon","Wafer bonding","Die preparation","Composite material","Wafer dicing"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-06-15T02:27:46.184661Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}