{"doi":"10.1063/1.103556","title":"Prediction of direct band gaps in monolayer (001) and (111) GaAs/GaP superlattices","abstract":"<jats:p>The bulk GaAs0.5P0.5 alloy with lattice constant a(0.5) has an indirect band gap. First-principles self-consistent pseudopotential band structure calculations show that the monolayer (GaAs)1 (GaP)1 superlattice (SL) in either the (001) or the (111) layer orientation G is also indirect if constrained epitaxially on a substrate whose lattice constant is a(0.5). However, if grown coherently on a GaAs substrate we predict that both of these SLs will have a direct band gap. This is explained in terms of the deformation potentials of the underlying materials. Predicted band offsets are given for both (001) and (111) GaP/GaAs.</jats:p>","journal":"Applied Physics Letters","year":1990,"id":38426,"datarank":1.2102949986370541,"base_score":3.1780538303479458,"endowment":3.1780538303479458,"self_citation_contribution":0.47670807455219194,"citation_network_contribution":0.7335869240848623,"self_endowment_contribution":0.47670807455219194,"citer_contribution":0.7335869240848623,"corpus_percentile":null,"corpus_rank":null,"citation_count":23,"citer_count":12,"citers_with_citation_signal":10,"citers_with_endowment":10,"datacite_reuse_total":0,"is_dataset":false,"is_dataset_confidence":null,"is_data_producer":false,"deposit_databanks":null,"is_oa":false,"file_count":0,"downloads":0,"has_version_chain":false,"published_date":null,"fair_score":null,"fair_percentile":null,"algorithm_id":"datarank_citation_only_1hop_v6","ranking_scope":"data_only","authors":[{"id":92322,"name":"Alex Zunger","orcid":"0000-0001-5525-3003","position":1,"is_corresponding":false},{"id":190645,"name":"Robert G. Dandrea","orcid":null,"position":0,"is_corresponding":false}],"reference_count":0,"raw_metadata":{"has_enrichment":true,"base_score":3.1780538303479458,"endowment":3.1780538303479458,"datacite_reuse_total":0,"file_count":0,"downloads":0,"views":0,"has_version_chain":false,"is_dataset":false,"is_oa":false,"pmid":"18998881","pmcid":null,"openalex_id":"https://openalex.org/W1989941441","authors":[],"funders":[],"total_grants":0,"fwci":3.0205,"citation_percentile":0.91033491,"influential_citations":0,"citation_trend":[],"oa_status":"closed","license":null,"oa_locations":[{"url":"https://pubs.aip.org/aip/apl/article-pdf/57/10/1031/18478223/1031_1_online.pdf","host_type":"publisher"},{"url":"https://doi.org/10.1063/1.103556","host_type":"journal"}],"fields_of_study":["Semiconductor Quantum Structures and Devices","Semiconductor materials and interfaces","Superconducting and THz Device Technology","Physics"],"mesh_terms":[],"keywords":["Superlattice","Lattice constant","Monolayer","Band gap","Condensed matter physics","Pseudopotential","Epitaxy","Materials science","Direct and indirect band gaps","Electronic band structure","Gallium arsenide","Lattice (music)","Substrate (aquarium)","Wide-bandgap semiconductor","Alloy","Layer (electronics)","Physics","Nanotechnology","Optics","Diffraction","Geology","Metallurgy"],"sdg_mappings":[],"linked_datasets":[],"clinical_trials":[],"software_tools":[],"database_accessions":[],"source":"live","citation_network_status":"fetched"},"created_at":"2026-06-11T03:16:03.258680Z","pmid":null,"pmcid":null,"fwci":null,"citation_percentile":null,"influential_citations":0,"oa_status":null,"license":null,"views":0,"total_file_size_bytes":0,"version_count":0,"fair_f":null,"fair_a":null,"fair_i":null,"fair_r":null,"fair_zscore":null,"fair_rationale":null,"fair_model":null,"fair_agent_version":null,"fair_fulltext_source":null,"fair_has_llm":null,"fair_computed_at":null,"clinical_trials":[],"software_tools":[],"db_accessions":[],"linked_datasets":[],"topics":[]}